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| NJG1110PB1 www..com PDC Dual Band LNA GaAs MMIC n GENERAL DESCRIPTION The NJG1110PB1 is a dual band low noise amplifier (2 input 2 output) GaAs MMIC for 800MHz and 1500MHz band. The band switching between 800MHz and 1500MHz is established by one bit control signal by using built-in inverter circuit. An ultra small & thin FFP12 (Flip-Chip Fine package) package is adopted. n PACKAGE OUTLINE NJG1110PB1 n FEATURES lLow voltage operation lLow current consumption lLow control current lHigh gain lLow noise figure lHigh output IP3 lUltra small & ultra thin package +2.8V typ. 2.7mA typ. 20uA typ. 18dB typ. @f=820MHz 16dB typ. @f=1490MHz 1.2dB typ. @f=820MHz 1.1dB typ. @f=1490MHz +10dBm typ. @f=820MHz +13dBm typ. @f=1490MHz FFP12-B1 (Package size: 2.0x2.0x0.85mm) n PIN CONFIGURATION Note: The specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1110PB1 www..com n ABSOLUTE MAXIMUM RAT INGS (Ta=25C, Zs =Zl=50) PARAMETERS Operating voltage Control voltage Inverter supply voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VCTL VINV Pin PD Topr Tstg VDD =2.8V CONDITIONS RATINGS 5.0 5.0 5.0 +15 300 -40~+85 -55~+125 UNITS V V V dBm mW C C n ELECTRICAL CHARACTERISTICS 1 (DC) (Ta=+25C, Zs =Zl=50, VDD =VINV=2.8V) PARAMETERS Operating voltage Inverter supply voltage Control voltage (High) Control voltage (Low) Operating current Control current Inverter current SYMBOL VDD VINV VCTL(H) VCTL(L) IDD ICTL IINV No RF signal, VCTL=VCTL(L) No RF signal, VCTL=VCTL(H) No RF signal No RF signal CONDITIONS MIN 2.5 2.5 2.0 0.0 TYP 2.8 2.8 2.8 0.0 2.7 2.7 20 100 MAX 4.5 4.5 VINV 0.8 3.25 3.25 60 200 UNITS V V V V mA mA uA uA -2- NJG1110PB1 www..com nELECTRICAL CHARACTERISTICS 2 (800MHz BAND RF) (Ta=+25C, Zs =Zl=50, VDD =VINV=2.8V, VCTL=VCTL(L), freq=810~885MHz, with application circuit) PARAMETERS Small signal gain Gain flatness Noise figure Pin at 1dB compression point Output 3rd order intercept point Isolation Image suppression ratio RF INPUT1 VSWR RF OUTPUT1 VSWR SYMBOL Gain1 Gflat1 Gflat2 Gflat3 NF1 P-1dB(IN)1 OIP3_1 ISL1 ISL2 ISL3 IMR1 VSWRi1 VSWRo1 f1=freq, f2=freq+100kHz Pin=-35dBm freq=680~780MHz freq=1360~1560MHz freq=2040~2340MHz freq=582.4~657.4MHz freq=810~830MHz freq=838~843MHz freq=870~885MHz CONDITIONS MIN 16.0 -21 +6 25 35 45 4 TYP 18.0 1.2 -18 +10 30 45 55 6 MAX 19.0 0.5 0.5 0.5 1.4 2.2 2.0 UNITS dB dB dB dB dB dBm dBm dB dB dB dB - nELECTRICAL CHARACTERISTICS 3 (1.5GHz BAND RF) (Ta=+25C, Zs =Zl=50, VDD =VINV=2.8V, VCTL=VCTL(H), freq=1477~1501MHz, with application circuit) PARAMETERS Small signal gain Gain flatness Noise figure Pin at 1dB compression point Output 3rd order intercept point Isolation SYMBOL Gain2 Gflat4 NF2 P-1dB(IN)2 OIP3_2 ISL4 ISL5 ISL6 Image suppression ratio RF INPUT2 VSWR RF OUTPUT2 VSWR IMR2 VSWRi2 VSWRo2 f1=freq, f2=freq+100kHz Pin=-35dBm freq=1580~1620MHz freq=3160~3240MHz freq=4740~4860MHz freq=1700~1729MHz freq=1477~1501MHz CONDITIONS MIN 15.0 -20 +6 25 40 30 3 TYP 16.0 1.1 -17 +13 30 50 40 5 MAX 17.0 0.5 1.25 2.1 2.0 UNITS dB dB dB dBm dBm dB dB dB dB - -3- NJG1110PB1 www..com n TERMINAL INFORMATION Pin 1 2 3 4 5 6 7 8 9 10 11 12 Symbol VCTL GND GND Description Control Voltage terminal to select 800MHz band or 1.5GHz band to celect. Ground terminal (0V). Ground terminal (0V). Output terminal of 1.5GHz band. This terminal is also the power supply RFOUT2 terminal of the LNA, please use inductor (L5) to connect power supply. (Please see application circuit.) GND Ground terminal (0V). Output terminal of 800MHz band. This terminal is also the power supply RFOUT1 terminal of the LNA, please use inductor (L3) to connect power supply. (Please see application circuit.) GND GND VINV RFIN1 GND RFIN2 Ground terminal (0V). Ground terminal (0V). Power supply terminal of the inverter circuit. Output terminal of 800MHz band. The DC blocking capacitor is not required. Ground terminal (0V). Output terminal of 1.5GHz band. The DC blocking capacitor is not required. NOTE: 1) Ground terminal (2, 3, 5, 8, 11pin) should be connected to ground plane by multiple via holes for good grounding. 2) Please connect bypass capacitors possible close to inductors (L3, L5).. -4- NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (800MHz Band) NF,Gain vs. freq ( V =V 2.5 DD INV =2.8V,V CTL =0V,I DD =2.6mA,Ta=25 C ) 20 0.20 0.10 15 INPUT LINE LOSS ( dB ) 0.00 -0.10 -0.20 -0.30 -0.40 o Input Line Loss 800MHz Band Gain 2.0 1.5 NF(Embedded PCB,Connector LOSS) 10 1.0 NF(De-embedded PCB,Connector LOSS) 5 Gain (dB) NF (dB) 0.5 700 750 800 850 freq (MHz) 900 950 0 1000 -0.50 0 500 1000 1500 freq ( MHz ) 2000 2500 3000 Pout vs. Pin,Gain ( V =2.8V,V DD CTL =0V,I DD =2.6mA,freq=820MHz,Ta=25 C ) 25 -10 o P-1dB(IN),P-1dB(OUT) vs. freq ( V =V DD INV =2.8V,V CTL =0V,I DD =2.6mA,,Ta=25 C ) 0 o 10 1dB Gain Compression Line Gain P-1dB(OUT) 20 -12 P-1dB(IN) (dBm) -2 P-1dB(OUT) (dBm) o 5 0 Pout (dBm) P-1dB(OUT) =-1.8dBm 15 Gain (dB) -14 -4 -5 10 -16 -6 -10 Pout P-1dB(IN)=-18.5dBm -20 -40 5 -15 0 -18 P-1dB(IN) -20 800 -8 -5 -30 -20 -10 Pin (dBm) 0 10 820 840 860 freq (MHz) 880 -10 900 Pout,IM3 vs. Pin ( V =V DD INV IIP3,OIP3 vs. freq o =2.8V,V CTL =0V,I DD =2.6mA,f=820+820.1MHz,Ta=25 C ) 20 OIP3=+9.9dBm Pout Pout,IM3 (dBm) -20 ( V =V =2.8V,V =0V,I =2.6mA,df=100kHz,P =-36dBm,Ta=25 C ) DD INV CTL DD RF 0 14 0 -2 OIP3 -4 12 10 -40 IM3 -60 -6 8 -8 -80 IIP3=-7.8dBm -100 -40 -35 -30 -25 -20 Pin (dBm) -15 -10 -5 0 -10 800 820 IIP3 840 860 freq (MHz) 880 6 4 900 -5- OIP3 (dBm) IIP3 (dBm) NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (800MHz Band) IDD vs. VDD (V 3.0 INV Gain,NF vs. VDD (V 19 INV =2.8V,V CTL =0V,freq=820MHz ) =2.8V,V CTL =0V,freq=810 to 885MHz ) 1.6 Max (810 to 885MHz) 18 2.5 17 Gain 1.5 Gain ( dB ) IDD ( mA ) 2.0 16 Max (810 to 885MHz) 1.3 1.5 15 NF(De-embedded PCB,Connector LOSS) Min (810 to 885MHz) 1.2 1.0 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 5.0 14 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 1.1 5.0 OIP3,IIP3 vs. VDD (V 12 11 10 OIP3 Min (810 to 885MHz) INV P-1dB(OUT),P-1dB(IN) (V -3 1 0 -1 P-1dB(OUT) ( dBm ) IIP3 ( dBm ) -2 -3 -4 P-1dB(IN) INV =2.8V,V CTL =0V,freq=810 to 885MHz ) Max (810 to 885MHz) =2.8V,V CTL =0V,freq=820MHz ) -14 -15 -16 -17 -18 -19 -20 -21 -22 5.0 P-1dB(IN) ( dBm ) -4 -5 -6 Max (810 to 885MHz) P-1dB(OUT) OIP3 ( dBm ) 9 8 7 IIP3 -7 -8 -9 -10 -11 5.0 Min (810 to 885MHz) 6 5 4 2.0 -5 -6 -7 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 -6- NF ( dB ) Min (810 to 885MHz) 1.4 NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (800MHz Band) IDD vs. Ta ( V =V 3.0 DD INV Gain,NF vs. Ta ( V =V 20 DD INV =2.8V,V CTL =0V,IDD=2.6mA,freq=820MHz ) =2.8V,V CTL =0V,IDD=2.6mA ) 2.4 Gain 18 2.5 16 2.0 IDD (mA) Gain (dB) 2.0 14 1.2 1.5 12 f=810MHz f=840MHz f=885MHz 0.8 1.0 -40 -20 0 20 Ta ( C) o 40 60 80 10 -40 0.4 -20 0 20 o Ta ( C) 40 60 80 OIP3,IIP3 vs. Ta ( V =V DD INV P-1dB(IN),P-1dB(OUT) vs. Ta ( V =V DD INV =2.8V,V CTL =0V,IDD=2.6mA ) -5.0 f=810MHz f=840MHz f=885MHz OIP3 =2.8V,V CTL =0V,IDD=2.6mA,freq=820MHz ) -15 11.0 10.5 10.0 OIP3 ( dBm ) 9.5 9.0 8.5 8.0 7.5 IIP3 0 -5.5 -6.0 P-1dB(OUT) (dBm) IIP3 ( dBm ) -6.5 -7.0 -7.5 -8.0 -8.5 -9.0 -1 P-1dB(OUT) -16 -3 -18 -4 P-1dB(IN) -19 -5 -20 7.0 -40 -20 0 20 o Ta ( C) 40 60 80 -6 -40 -21 -20 0 20 o Ta ( C) 40 60 80 -7- P-1dB(IN) (dBm) -2 -17 NF (dB) NF(De-embedded PCB,Connector LOSS) 1.6 NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (800MHz Band) S11, S22 Zin, Zout VSWR S21, 12 -8- NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (800MHz Band) S21 S12 S11, S22 S21, S12 -9- NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (1.5GHz Band) NF,Gain vs. freq ( V =V DD INV =V CTL =2.8V,I DD =2.6mA,Ta=25 C ) 20 0.00 o Input Line Loss 1500MHz Band 2.5 Gain 2.0 -0.05 15 INPUT LINE LOSS ( dB ) -0.10 1.5 NF(Embedded LOSS) 10 Gain (dB) NF (dB) -0.15 -0.20 1.0 NF(De-embedded LOSS) 5 -0.25 0.5 1400 1450 1500 freq (MHz) 1550 0 1600 -0.30 0 500 1000 1500 freq ( MHz ) 2000 2500 3000 Pout vs. Pin,Gain ( V =V DD CTL =2.8V,I DD =2.6mA,freq=1490MHz,Ta=25 C ) 25 -10 o P-1dB(IN),P-1dB(OUT) vs. freq ( V =V DD INV =2.8V,V 15 10 5 Pout (dBm) P-1dB(OUT)=+0.5dBm 0 -5 Pout -10 -15 P-1dB(IN)=-15.5dBm -20 -40 1dB Gain Compression Line Gain CTL =0V,I DD =2.6mA,,Ta=25 C ) 4 o 20 -12 15 P-1dB(IN) (dBm) 10 5 0 -18 -5 -10 -20 -6 1470 1475 1480 1485 1490 1495 1500 1505 1510 freq (MHz) -4 Gain (dB) -14 P-1dB(OUT) 0 2 P-1dB(OUT) (dBm) OIP3 (dBm) -16 P-1dB(IN) -2 -30 -20 -10 0 10 Pin (dBm) Pout,IM3 vs. Pin ( V =V DD INV =V CTL =2.8V,I DD =2.6mA,f=1490+1490.1MHz,Ta=25 C ) o IIP3,OIP3 vs. freq ( V =V =V =2.8V,I =2.6mA,df=100kHz,P =-36dBm,Ta=25 C ) DD INV CTL DD RF 2 14 OIP3 0 12 o 20 OIP3=+11.8dBm 0 Pout Pout,IM3 (dBm) -20 IIP3 (dBm) -2 10 -40 -4 IIP3 -6 8 -60 IM3 -80 IIP3=-5.1dBm -100 -40 -35 -30 -25 -20 Pin (dBm) -15 -10 -5 0 -8 1460 1470 1480 1490 1500 freq (MHz) 1510 4 1520 6 - 10 - NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (1.5GHz Band) IDD vs. VDD (V 3.0 INV Gain,NF vs. VDD (V 18 INV =2.8V,V CTL =0V,freq=1490MHz ) =V CTL =2.8V,freq=1477 to 1501MHz ) 1.5 Max (1477 to 1501MHz) 17 2.5 Gain 1.4 IDD ( mA ) Gain ( dB ) 2.0 15 NF(De-embedded PCB,Connector LOSS) 1.2 1.5 14 Max (1477 to 1501MHz) 1.1 Min (1477 to 1501MHz) 1.0 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 5.0 13 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 1.0 5.0 OIP3,IIP3 vs. VDD (V 14 13 Min (1477 to 1501MHz) INV P-1dB(OUT),P-1dB(IN) vs. VDD (V 1 2 1 0 P-1dB(OUT) ( dBm ) IIP3 ( dBm ) -1 -2 -3 -4 P-1dB(IN) P-1dB(OUT) INV =V CTL =2.8V,freq=1477 to 1501MHz ) Max (1477 to 1501MHz) =V CTL =2.8V,freq=1490MHz ) -9 -10 -11 -12 -13 -14 -15 -16 -17 5.0 P-1dB(IN) ( dBm ) 0 -1 OIP3 12 OIP3 ( dBm ) 11 10 Max (1477 to 1501MHz) -2 -3 -4 IIP3 Min (1477 to 1501MHz) 9 8 7 6 2.0 -5 -6 -7 5.0 -5 -6 2.0 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 2.5 3.0 3.5 VDD ( V ) 4.0 4.5 - 11 - NF ( dB ) 16 Min (1477 to 1501MHz) 1.3 NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (1.5GHz Band) IDD vs. Ta ( V =V 3.0 DD INV Gain,NF vs. Ta ( V =V 20 DD INV =V CTL =2.8V,IDD=2.6mA,freq=1490MHz ) =V CTL =2.8V,IDD=2.6mA ) 2.4 f=1477MHz f=1490MHz f=1501MHz 18 2.5 Gain 2.0 IDD (mA) 16 Gain (dB) 2.0 1.6 NF (dB) P-1dB(IN) (dBm) 14 NF(De-embedded PCB,Connector LOSS) 1.2 1.5 12 0.8 1.0 -40 -20 0 20 Ta ( C) o 40 60 80 10 -40 0.4 -20 0 20 o Ta ( C) 40 60 80 OIP3,IIP3 vs. Ta ( V =V DD INV P-1dB(IN),P-1dB(OUT) vs. Ta ( V =V DD INV =V CTL 2.8V,IDD=2.6mA ) -2.0 f=1477MHz f=1490MHz f=1501MHz OIP3 =V CTL =2.8V,IDD=2.6mA,freq=1490MHz ) -11 13.0 12.5 12.0 11.5 OIP3 (dB) 11.0 10.5 10.0 9.5 9.0 -40 IIP3 1 -2.5 -3.0 P-1dB(OUT) (dBm) IIP3 (dBm) -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 P-1dB(OUT) -12 -1 -13 -2 -14 -3 P-1dB(IN) -15 -4 -16 -20 0 20 o Ta ( C) 40 60 80 -5 -40 -17 -20 0 20 o Ta ( C) 40 60 80 - 12 - NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (1.5GHz Band) S11, S22 Zin, Zout VSWR S21, 12 - 13 - NJG1110PB1 www..com n TYPICAL CHARACTERISTICS (1.5GHz Band) S21 S12 S11, S22 S21, S12 - 14 - NJG1110PB1 www..com n APPLICATION CIRCUIT VINV=2.8V L2 RF INPUT 1 L1 10 9 8 7 C1 6 RF OUTPUT 1 L3 C3 S G 11 800 D 5 VDD=2.8V G 1500 S D L4 RF INPUT 2 12 4 RF OUTPUT 2 L5 1 2 3 C2 V CTL=2.8/0V PARTS LIST Parts ID L1 L2 L3 L4 L5 C1 C2 C3 CONSTANT 22nH 27nH 10nH 12nH 15nH 2pF 6pF 1000pF COMMENT TAIYO-YUDEN (HK1005, 1005size) MEC (ELJNJ, 1608size) TAIYO-YUDEN (HK1005, 1005size) TAIYO-YUDEN (HK1005, 1005size) TAIYO-YUDEN (HK1005, 1005size) MURATA (GRM36, 1005size) MURATA (GRM36, 1005size) MURATA (GRM36, 1005size) *: Please use an appropriate inductor for L2 to improve Noise Figure. - 15 - NJG1110PB1 www..com n RECOMMENDED PCB DESIGN (Top View) 800MHz Band RF INPUT 1 VINV L1 C1 L2 L4 L5 C2 L3 C3 VDD 800MHz Band RF OUTPUT 1 1500MHz Band RF INPUT 2 VCTL 1500MHz Band RF OUTPUT 2 PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH=0.4mm (Z0=50) PCB SIZE=17x17mm PRECAUTIONS [1] Please locate L2, L4, L3, and L5 close to IC. [2] Please locate C3 close to L3, L5. [3] Please layout each parts as close as possible. - 16 - NJG1110PB1 www..com nPACKAGE OUTLINE (FFP12-B1) 1pin INDEX 1 2p in (TOP VIEW) 1pin 0.35 2pin INDEX 0.2540.1 0.850.15 35 0. 0.10 3 0.30 3 0.1 7 0 .30 (SIDE VIEW) 0.50 0.20 (BOTTOM V IEW) 2.0 0.1 0.365 2.00.1 0.27 UNIT PCB OVER COAT TERMINAL TREAT WEIGHT : mm : Ceramic : Epoxy resin : Au : 10mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 17 - |
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